• DocumentCode
    2741995
  • Title

    Rapid Thermal Annealing Effect On Valence-band Splitting Behavior in GaNxAs1-x/GaAs

  • Author

    Liu, Z.L. ; Chen, P.P. ; Wang, C. ; Cui, H.Y. ; Li, Y.J. ; Li, T.X. ; Chen, X.S. ; Lu, W.

  • Author_Institution
    Chinese Acad. of Sci., Shanghai
  • fYear
    2006
  • fDate
    18-22 Sept. 2006
  • Firstpage
    456
  • Lastpage
    456
  • Abstract
    Our investigation is about rapid thermal annealing (RTA) effect on valence-band splitting (VBS) of GaNxAs1-x. The observed VBS between light-and heavy-hole induced by lattice strain in GaNxAs1-x epilayers is gradually weakened by the RTA process. This could be attributed to strain relax caused by nitrogen reorganization after RTA.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; rapid thermal annealing; semiconductor epitaxial layers; stress relaxation; valence bands; wide band gap semiconductors; GaNAs-GaAs; epilayers; lattice strain; nitrogen reorganization; rapid thermal annealing effect; strain relaxation; valence-band splitting behavior; Capacitive sensors; Fluctuations; Gallium arsenide; Lattices; Material properties; Nitrogen; Physics; Rapid thermal annealing; Spectroscopy; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0400-2
  • Electronic_ISBN
    1-4244-0400-2
  • Type

    conf

  • DOI
    10.1109/ICIMW.2006.368664
  • Filename
    4222398
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2741995