DocumentCode :
2741995
Title :
Rapid Thermal Annealing Effect On Valence-band Splitting Behavior in GaNxAs1-x/GaAs
Author :
Liu, Z.L. ; Chen, P.P. ; Wang, C. ; Cui, H.Y. ; Li, Y.J. ; Li, T.X. ; Chen, X.S. ; Lu, W.
Author_Institution :
Chinese Acad. of Sci., Shanghai
fYear :
2006
fDate :
18-22 Sept. 2006
Firstpage :
456
Lastpage :
456
Abstract :
Our investigation is about rapid thermal annealing (RTA) effect on valence-band splitting (VBS) of GaNxAs1-x. The observed VBS between light-and heavy-hole induced by lattice strain in GaNxAs1-x epilayers is gradually weakened by the RTA process. This could be attributed to strain relax caused by nitrogen reorganization after RTA.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; rapid thermal annealing; semiconductor epitaxial layers; stress relaxation; valence bands; wide band gap semiconductors; GaNAs-GaAs; epilayers; lattice strain; nitrogen reorganization; rapid thermal annealing effect; strain relaxation; valence-band splitting behavior; Capacitive sensors; Fluctuations; Gallium arsenide; Lattices; Material properties; Nitrogen; Physics; Rapid thermal annealing; Spectroscopy; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
Type :
conf
DOI :
10.1109/ICIMW.2006.368664
Filename :
4222398
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2741995
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