A study of the structure and electrical properties of CuInSe2/Cu-substrate

In this study, we have formed form CuInSe₂ thin film, using Cu substrate. To form thin film, we deposited on Cu substrate by evaporation and completed the element in 4 steps in total. Notably, our primary focus was on the results of deposition of In on Cu substrate, heat treatment step at low temperature for binary formation by Cu diffusion and at high temperature to convert binary phase to CuInSe₂ in the end. With such results from the experiment, we are analyzed the formation of CuInSe₂ thin film and the microstructure and electrical properties of the thin film. We are also tried conventional CuInSe₂ thin film deposition method relying on co-evaporation and traced the cause of non-formation of CuInSe₂ thin film in co-evaporation conditions. The experimental results in this study will make significant contribution to the development of various research techniques concerning flexible solar cell manufacturing processes subsequently.