Title :
Heterojunction acoustic charge transport for transversal filter applications
Author :
Olson, S. ; Garber, E. ; Streit, D. ; Jones, W. ; Ko, D. ; Meadows, B.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
HACT (heterojunction acoustic charge transport) devices have been produced which use an AlGaAs/GaAs heterostructure for vertical charge confinement. Results for a tapped delay line and for a 50 tap transversal filter are shown. The devices have a transfer efficiency of 0.9994, and have less than 3 dB rolloff below the Nyquist frequency. The transversal filter gave 5.6 dB insertion loss, and 11.8 dB sidelobe rejection, which was within 1.5 dB of a simple Fourier transform model
Keywords :
acoustoelectric devices; p-n heterojunctions; surface acoustic wave filters; ultrasonic delay lines; AlGaAs-GaAs heterojunction; Fourier transform model; HACT device; III-V semiconductors; Nyquist frequency; SAW; heterojunction acoustic charge transport; insertion loss; tapped delay line; transfer efficiency; transversal filter; vertical charge confinement; Acoustic applications; Charge coupled devices; Electrons; Frequency; Gallium arsenide; Heterojunctions; Molecular beam epitaxial growth; Potential well; Surface acoustic waves; Transversal filters;
Conference_Titel :
Ultrasonics Symposium, 1990. Proceedings., IEEE 1990
Conference_Location :
Honolulu, HI
DOI :
10.1109/ULTSYM.1990.171357
