Modeling on GaAs/AlGaAs quantum well infrared photodetector

In this paper we demonstrate the modelling and simulation of the GaAs/AlGaAs quantum well infrared photodetector (QWIP). For a practical device and material structure and properties, a theoretical model is established based on the Schrodinger and Maxwell equations. Some of the basic parameters in the theoretical model are determined by the micro-optical characterization of the QWIP material. Based on the experimental determined QWIP material properties and the theoretical model, a detail computer simulation is performed on the optical coupling, photo-excited carrier and dark current on the practical device structure. Several phenomenon of the QWIP, including fine structure in the QWTP´s photocurrent spectrum and irradiation effect on QWIP have been explained well by our theoretical model. The experimental results on the GaAs/AlGaAs QWIP demonstrated also the validity of this theoretical model.