Title :
New Shallow Donors in High-purity Si
Author :
Yu, C.H. ; Zhang, B. ; Li, Y.J. ; Lu, W. ; Shen, S.C.
Author_Institution :
Chinese Acad. of Sci., Shanghai
Abstract :
Two new hydrogenic shallow donors with binding energies of 38.32 and 40.09 meV are observed, in addition to phosphorus (P) and antimony (Sb) donors, in n-type high-purity silicon crystals by means of high-resolution photothermal ionization spectroscopy.
Keywords :
antimony; binding energy; elemental semiconductors; impurity states; phosphorus; photothermal spectroscopy; silicon; Si:P; Si:Sb; binding energy; high-resolution photothermal ionization spectroscopy; hydrogenic shallow donors; n-type high-purity silicon crystals; Conductivity; Crystals; Fourier transforms; Ionization; Material properties; Performance evaluation; Physics; Semiconductor impurities; Silicon; Spectroscopy;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368689
