Title :
A high performance 256K TTL SRAM using 0.8um triple diffused BiCMOS with 3V circuit techniques
Author :
Young, I. ; Denham, M. ; Greason, J. ; Kaveh, G. ; Kolousek, J. ; Sarkez, K.
Author_Institution :
INTEL Corporation
fDate :
May 30 1991-June 1 1991
Keywords :
BiCMOS integrated circuits; Bipolar transistors; CMOS logic circuits; CMOS technology; Circuit synthesis; Design methodology; Logic circuits; Logic gates; Random access memory; Voltage;
Conference_Titel :
VLSI Circuits, 1991. Digest of Technical Papers. 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIC.1991.760057
