DocumentCode :
2742581
Title :
Properties of MBE Growth InN: Cr Films
Author :
Chen, P.P. ; Lu, Wenchao ; Makino, H. ; Yao, T.
Author_Institution :
Chinese Acad. of Sci., Shanghai
fYear :
2006
fDate :
18-22 Sept. 2006
Firstpage :
487
Lastpage :
487
Abstract :
InN:Cr films were prepared at Al2O3 substrate by low temperature (300degC) molecular beam epitaxy (MBE). The InN:Cr films show clear ferromagnetic properties up to 350K. The electronic structure of the InN:Cr film has been studied by photoemission spectroscopy.
Keywords :
III-V semiconductors; aluminium compounds; chromium; electronic structure; ferromagnetism; indium compounds; molecular beam epitaxial growth; photoelectron spectra; Al2O3; InN:Cr; MBE; electronic structure; ferromagnetic properties; low temperature molecular beam epitaxy; photoemission spectroscopy; temperature 300 degC to 350 degC; Chromium; Magnetic films; Magnetic materials; Magnetization; Molecular beam epitaxial growth; Optical films; Physics; Plasma temperature; Semiconductor films; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
Type :
conf
DOI :
10.1109/ICIMW.2006.368695
Filename :
4222429
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2742581
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