DocumentCode :
2742669
Title :
Optical properties of self-assemble InAs quantum dots studies by piezomodulated reflectance spectroscopy
Author :
Wang, C. ; Chen, P.P. ; Liu, Z.L. ; Xia, C.S. ; Li, T.X. ; Zhang, J.B. ; Chen, X.S. ; Lu, W.
Author_Institution :
Chinese Acad. of Sci., Shanghai
fYear :
2006
fDate :
18-22 Sept. 2006
Firstpage :
493
Lastpage :
493
Abstract :
We report our investigation on piezoreflectance spectra (PZR) of a conventional InAs quantum dots (CVQD) and an InAs/In0.15Ga0.85As dots-in-a-well (DWELL). A large red-shift of ground state QD0 between two samples is attributed mainly to larger size of DWELL induced by the activated strained-driven decomposition.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; piezoreflectance; quantum dots; InAs; InAs-InGaAs; dots-in-a-well; piezomodulated reflectance spectroscopy; piezoreflectance spectra; self-assemble quantum dots; strained-driven decomposition; Gallium arsenide; Laboratories; Material properties; Molecular beam epitaxial growth; Physics; Quantum dots; Reflectivity; Spectroscopy; Stationary state; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
Type :
conf
DOI :
10.1109/ICIMW.2006.368701
Filename :
4222435
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2742669
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