Investigation of Pico-Second Triggered Jitter-Time Ultra-Fast Electrical Pulses with GaAs Potoconductive Switches

The generation of triggered jitter-free ultra-fast electrical pulses is important in precise and ultra-fast bing bang control. Experiments of a lateral semi-insulating GaAs photoconductive semiconductor switch triggered by nanosecond laser pulse were reported. The switches were insulated by solid multi-layer transparent dielectrics. Jitter-free electrical pulse from the 1 mm-gap GaAs switches was observed when biased with the low voltage and triggered by the serial laser pulses. Its triggered jitter-time was less than 10 ps, and pulse width was up to sub-nanosecond.