Title :
40-Gb/s Colorless Reflective Amplified Modulator
Author :
Lawniczuk, Katarzyna ; Patard, O. ; Guillamet, R. ; Chimot, N. ; Garreau, A. ; Kazmierski, C. ; Aubin, Guy ; Merghem, K.
Author_Institution :
Fac. of Electr. Eng., Eindhoven Univ. of Technol., Eindhoven, Netherlands
Abstract :
In this letter, we demonstrate a colorless reflective amplified modulator operating within the C- and L-band spectral ranges with the modulation data rate up to 40 Gb/s. We obtain a stable, open eye performance of the device at the temperature until 85°C. The presented device is fabricated using an indium phosphide (InP) monolithic integration platform, which relies on an AlGaInAs quantum well active material, gap engineering by selective area growth, and low-parasitic RC semi-insulating buried heterostructures.
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; electro-optical modulation; gallium arsenide; indium compounds; integrated optoelectronics; microwave photonics; optical communication equipment; optical fabrication; semiconductor optical amplifiers; AlGaInAs-InP; C-band spectral range; L-band spectral range; bit rate 40 Gbit/s; colorless reflective amplified modulator; gap engineering; indium phosphide monolithic integration platform; low-parasitic RC semiinsulating buried heterostructures; modulation data rate; quantum well active material; selective area growth; Indium phosphide; Modulation; Optical fiber devices; Optical fibers; Optical reflection; Semiconductor optical amplifiers; Temperature measurement; Electro-absorption modulator; indium phosphide; optical access network; photonic integrated circuit; reflective amplified modulator; semiconductor optical amplifier;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2013.2238622
