Sub-Picosecond Time-Domain Measurement of Heterojunction Bipolar Transistors and Photodiodes

Author

Beck, A. ; Lampin, J.F. ; Zaknoune, M. ; Desplanque, L. ; Mollot, F.

Author_Institution

Inst. d´´Electron. de Microelectron. et de Nanotechnol., Villeneuve-d´´Ascq

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

510

Lastpage

510

Abstract

We demonstrate the time-domain measurement of the dynamic response of heterojunction bipolar transistors (HBT) and uni-travelling carrier photodiodes (UTC-PD) with sub-picosecond resolution. For the HBT, the stimulus is a step applied to the base. For the UTC-PD, we use optical excitation with 150 fs pulses at 1.55 mum. The detection of the electrical response is done using an electroabsorption sampling technique.

Keywords

electroabsorption; excited states; heterojunction bipolar transistors; photodiodes; time-domain analysis; electrical response detection; electroabsorption sampling technique; heterojunction bipolar transistors; optical excitation; subpicosecond time domain measurement; time 150 fs; unitravelling carrier photodiodes; wavelength 1.55 mum; Cutoff frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laser excitation; Optical pulses; Optical pumping; Photodiodes; Time domain analysis; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368718

Filename

4222452