Title :
Sub-Picosecond Time-Domain Measurement of Heterojunction Bipolar Transistors and Photodiodes
Author :
Beck, A. ; Lampin, J.F. ; Zaknoune, M. ; Desplanque, L. ; Mollot, F.
Author_Institution :
Inst. d´´Electron. de Microelectron. et de Nanotechnol., Villeneuve-d´´Ascq
Abstract :
We demonstrate the time-domain measurement of the dynamic response of heterojunction bipolar transistors (HBT) and uni-travelling carrier photodiodes (UTC-PD) with sub-picosecond resolution. For the HBT, the stimulus is a step applied to the base. For the UTC-PD, we use optical excitation with 150 fs pulses at 1.55 mum. The detection of the electrical response is done using an electroabsorption sampling technique.
Keywords :
electroabsorption; excited states; heterojunction bipolar transistors; photodiodes; time-domain analysis; electrical response detection; electroabsorption sampling technique; heterojunction bipolar transistors; optical excitation; subpicosecond time domain measurement; time 150 fs; unitravelling carrier photodiodes; wavelength 1.55 mum; Cutoff frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laser excitation; Optical pulses; Optical pumping; Photodiodes; Time domain analysis; Ultrafast optics;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368718
