THz GaAs/AlGaAs Quantum Well Detector

Author

Patrashin, M. ; Hosako, I.

Author_Institution

Nat. Inst. of Inf. & Commun. Technol., Koganei

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

512

Lastpage

512

Abstract

We have designed and tested basic operation of a GaAs/AlGaAs quantum well photodetector in THz range of spectrum (3 THz, 100 mum). Responsivity of a few mA/W was measured, however achieving of the background-limited performance was not feasible because of high level of the dark current. Suitability of the device for practical applications will depend on further improvements of the design. We believe that better performance can be attained by optimizing the doping levels in the quantum wells. To evaluate suitability of the quantum well detectors for THz imaging, a small (up to 32 elements) prototype array will be tested.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; photodetectors; semiconductor quantum wells; submillimetre wave detectors; submillimetre wave imaging; GaAs-AlGaAs; THz detector; THz imaging; dark current; doping levels; quantum well photodetector; Current measurement; Dark current; Doping; Gallium arsenide; Photodetectors; Prototypes; Radiation detectors; Semiconductor radiation detectors; Sensor arrays; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368720

Filename

4222454