DocumentCode :
2743030
Title :
THz GaAs/AlGaAs Quantum Well Detector
Author :
Patrashin, M. ; Hosako, I.
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Koganei
fYear :
2006
fDate :
18-22 Sept. 2006
Firstpage :
512
Lastpage :
512
Abstract :
We have designed and tested basic operation of a GaAs/AlGaAs quantum well photodetector in THz range of spectrum (3 THz, 100 mum). Responsivity of a few mA/W was measured, however achieving of the background-limited performance was not feasible because of high level of the dark current. Suitability of the device for practical applications will depend on further improvements of the design. We believe that better performance can be attained by optimizing the doping levels in the quantum wells. To evaluate suitability of the quantum well detectors for THz imaging, a small (up to 32 elements) prototype array will be tested.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; photodetectors; semiconductor quantum wells; submillimetre wave detectors; submillimetre wave imaging; GaAs-AlGaAs; THz detector; THz imaging; dark current; doping levels; quantum well photodetector; Current measurement; Dark current; Doping; Gallium arsenide; Photodetectors; Prototypes; Radiation detectors; Semiconductor radiation detectors; Sensor arrays; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
Type :
conf
DOI :
10.1109/ICIMW.2006.368720
Filename :
4222454
Link To Document :
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