DocumentCode :
274315
Title :
Large scale circuit applications of SOI
Author :
Hosack, Harold
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fYear :
1989
fDate :
3-5 Oct 1989
Firstpage :
29
Abstract :
Summary form only given, as follows. Silicon-on insulator (SOI) has been advertised as the next-generation technology for both radiation hardened and commercial large-scale ICs several years. Realization of the promises of this technology, particularly for large-scale circuits, has made slower progress than was at one time envisioned. Recent advances, however, in both the processing and materials aspects of the technology has significantly increased the chances of volume manufacturing of SOI devices. The recent advances which have been made in SOI materials and process technology, that have a direct impact on large-scale circuit application are discussed. The disadvantages and remaining hurdles which must be overcome to allow volume applications of SOI are also considered
Keywords :
integrated circuit technology; large scale integration; semiconductor-insulator boundaries; SOI; SOI materials; large-scale ICs; process technology; volume manufacturing; Circuits; Instruments; Insulation; Large-scale systems; Manufacturing processes; Radiation hardening; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
Type :
conf
DOI :
10.1109/SOI.1989.69750
Filename :
69750
Link To Document :
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