Title :
Heterostructure acoustic charge transport device model
Author :
Merritt, Sears W.
Author_Institution :
United Technol. Res. Center, East Hartford, CT, USA
Abstract :
A small-signal circuit model for heterostructure acoustic charge transport (HACT) devices is derived from experimental data. The model includes the device transconductance, impulse, noise, and nonlinear responses. Data are presented which show how the transconductance and the noise floor are related to the quiescent current in the transport channel. Noise power is also related to the number of electrodes in the output array. The measured transconductance is 0.2-0.5 mS/mm for devices operating at 144 MHz. The noise current density in the transport channel is shown to vary as the square root of bias current. The noise power density in the output circuit is shown to vary as the square of the number of output electrodes. Design rules are presented which can be used to predict the noise floor gain, compression point, and dynamic range for a HACT device based on its transconductance
Keywords :
acoustoelectric devices; p-n heterojunctions; semiconductor device models; surface acoustic wave devices; ultrasonic delay lines; 144 MHz; HACT device; compression point; design rules; dynamic range; gain; heterostructure acoustic charge transport; noise current density; noise floor; noise power density; nonlinear responses; quiescent current; small signal behaviour; small-signal circuit model; transconductance; transversal filter; Acoustic devices; Acoustic distortion; Acoustic noise; Circuit noise; Distortion measurement; Electrodes; Electrons; Semiconductor device noise; Semiconductor materials; Transconductance;
Conference_Titel :
Ultrasonics Symposium, 1990. Proceedings., IEEE 1990
Conference_Location :
Honolulu, HI
DOI :
10.1109/ULTSYM.1990.171362
