Title :
Radiation-induced magnetoresistance oscillations in two-dimensional electron systems
Author_Institution :
Shanghai Jiaotong Univ., Shanghai
Abstract :
We carry out a systematic theoretical analysis on radiation induced magnetoresistance oscillations (RI-MOs) in high-mobility two-dimensional electron systems (2DESs), based on the balance-equation approach to magnetotransport developed for high-carrier-density systems. The time-dependent drift velocity v(i) and electron temperature Te serve as the basic parameters, which enter the frictional force, energy absorption and energy dissipation rates and are determined through the force and energy balance equations when the incident radiation field is given. The model covers regimes of inter-and intra-Landau level processes, takes account of multiphoton-assisted electron transitions as well as radiation-induced change of the electron distribution, and naturally includes electrodynamic damping. Electron scatterings by impurities, transverse and longitudinal acoustic phonons as well as polar optic phonons are considered simultaneously.
Keywords :
carrier density; electrodynamics; electromagnetic oscillations; magnetoresistance; multiphoton processes; phonons; acoustic phonons; balance-equation approach; electrodynamic damping; electron distribution; electron scatterings; electron temperature; energy absorption; energy dissipation rates; frictional force; high-carrier-density systems; high-mobility two-dimensional electron systems; incident radiation field; magnetotransport; multiphoton-assisted electron transitions; polar optic phonons; radiation-induced magnetoresistance oscillations; time-dependent drift velocity; two-dimensional electron systems; Absorption; Electron mobility; Energy dissipation; Equations; Magnetic analysis; Magnetoresistance; Optical scattering; Phonons; Tellurium; Temperature;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368735