DocumentCode
2743348
Title
Non-dissipative Undeland snubber for electric vehicle drive inverters using GaAs anti-parallel diodes
Author
Kamath, Girish R. ; Mohan, Ned ; Undeland, T.M.
Author_Institution
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Volume
2
fYear
1996
fDate
8-11 Jan 1996
Firstpage
748
Abstract
Many techniques have been developed over the years for reducing the switching stresses and losses in the transistor switches of DC-AC inverters. Soft-switching techniques such as resonant-pole inverters, resonant DC link inverters and quasi-resonant DC link inverters suffer from substantially increased voltage or current ratings of the devices, additional controlled switches and increased complexity of control. Conventional snubbers are simple to use, but the dissipation in the snubber results in no overall improvement in the efficiency of the inverter. The Undeland snubber with a simple energy recovery circuit combines both the simplicity of the conventional snubber while reducing the switching stresses in the switches and improving the overall efficiency of the power circuit. Experiments are conducted on single-phase 1 kVA MOSFET inverter with GaAs anti-parallel diodes and operating from a DC bus of 135 V. The results are presented for operations in the hard-switched mode as well as with the regenerative Undeland snubber in operation. It is shown that the Undeland snubber improves efficiency as compared to the hard switched mode of operation. Practical limitations and design considerations of the Undeland snubber in the presence of improved devices such as low-reverse recovery current diodes like GaAs diodes are also shown
Keywords
DC-AC power convertors; PWM invertors; electric vehicles; field effect transistor switches; power MOSFET; power field effect transistors; power semiconductor diodes; power semiconductor switches; snubbers; switching circuits; traction motor drives; 1 kVA; 135 V; DC bus; GaAs; Undeland snubber; anti-parallel diodes; efficiency; electric vehicle drive inverters; energy recovery circuit; hard-switched operating mode; power MOSFET switches; switching losses; switching stresses; Diodes; Electric vehicles; Gallium arsenide; Resonance; Resonant inverters; Snubbers; Stress; Switches; Switching circuits; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics, Drives and Energy Systems for Industrial Growth, 1996., Proceedings of the 1996 International Conference on
Conference_Location
New Delhi
Print_ISBN
0-7803-2795-0
Type
conf
DOI
10.1109/PEDES.1996.535872
Filename
535872
Link To Document