DocumentCode :
2743447
Title :
Temperature-compensation Circuit Techniques For High-density CMOS DRAMs
Author :
Min, Dong-Sun ; Jun, Dong-Soo ; Cho, Sooin ; Seok, Yongsik ; Kim, Youngrae ; Min, Kyung-Ryul ; Han, Jinman ; Roh, Jaegu ; Kwon, O.H. ; Chin, Daeje ; Park, Y.E.
Author_Institution :
Samsung Electronics Co., Ltd.
fYear :
1991
fDate :
May 30 1991-June 1 1991
Firstpage :
125
Lastpage :
126
Keywords :
CMOS technology; Circuit testing; Delay; MOSFETs; Random access memory; Research and development; Resistors; Semiconductor diodes; Temperature; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 1991. Digest of Technical Papers. 1991 Symposium on
Conference_Location :
Oiso, Japan
Type :
conf
DOI :
10.1109/VLSIC.1991.760110
Filename :
760110
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2743447
