Title :
Sub-milliampere threshold InGaAs/GaAs/AlGaAs laser array elements by single step growth on nonplanar substrates
Author :
Zhao, H. ; MacDougal, M.H. ; Uppal, K. ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Ultra-low-threshold current InGaAs/GaAs lasers are made by single-step MOCVD growth on nonplanar substrates. Active region widths ranging from 1.6 to 0.2 μm have been studied. Uncoated laser threshold currents as low as 0.5 mA has been obtained
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; optical fabrication; quantum well lasers; semiconductor laser arrays; vapour phase epitaxial growth; 0.5 mA; 1.6 to 0.2 mum; InGaAs-GaAs-AlGaAs; InGaAs/GaAs lasers; InGaAs/GaAs/AlGaAs laser array elements; active region widths; laser threshold currents; nonplanar substrates; single-step MOCVD growth; sub-milliampere threshold; ultra-low-threshold currents; Doping; Gallium arsenide; Indium gallium arsenide; Laser theory; MOCVD; Optical arrays; Quantum well lasers; Substrates; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.518898
