Title :
Enhanced Terahertz Emission from InAs Quantum Dots on GaAs
Author :
Park, Heejung ; Kim, Jung-Ho ; Moon, Kiryang ; Han, Hu
Author_Institution :
Pohang Univ. of Sci. & Technol., Pohang
Abstract :
Optically pumped THz emission has been observed in a wide range of semiconductors, and this process is an important practical source of pulsed THz radiation for time-domain THz spectroscopy and THz imaging. We show that InAs quantum dots on GaAs can be used to significantly enhance THz emission compared with a bare GaAs surface.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; submillimetre wave imaging; submillimetre wave spectra; InAs-GaAs; THz imaging; enhanced terahertz emission; optically pumped THz emission; pulsed terahertz radiation source; quantum dots; terahertz imaging; time-domain terahertz spectroscopy; Antenna measurements; Gallium arsenide; Laser excitation; Molecular beam epitaxial growth; Optical surface waves; Quantum dots; Spectroscopy; Surface emitting lasers; Transmission line measurements; Ultrafast optics;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368751
