DocumentCode
2743534
Title
Terahertz Emission Properties of p-InAs Surface Radiation under Different Excitations
Author
Zhao, Guozhong ; Sun, Hongqi ; Tian, Yan ; Zhang, Cunlin
Author_Institution
Capital Normal Univ., Beijing
fYear
2006
fDate
18-22 Sept. 2006
Firstpage
544
Lastpage
544
Abstract
Terahertz (THz) emission properties of p-InAs surface radiation under the different excitations of femtosecond pulses are studied by means of time-domain spectroscopy. The experimental results show that the spectral waveform and amplitude of terahertz radiation are different for the excitations with different wavelengths. The full-width of half-maximum (FWHM) of THz radiation excited by the short wavelength of pulse is larger than that of the long wavelength. THz emission strength increases with increasing of pump wavelength. The peak amplitude of THz pulse increases linearly with increasing of the excitation power. It provides a useful reference for the application of THz emitter.
Keywords
arsenic compounds; emission; indium compounds; submillimetre wave lasers; submillimetre wave spectroscopy; time-domain analysis; FWHM; InAs; femtosecond pulse; full-width-half-maximum; p-InAs surface radiation; spectral waveform; terahertz emission properties; terahertz radiation; time-domain spectroscopy; Crystals; Doping; Frequency; Laser excitation; Material properties; Optical pulses; Physics; Spectroscopy; Sun; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0400-2
Electronic_ISBN
1-4244-0400-2
Type
conf
DOI
10.1109/ICIMW.2006.368752
Filename
4222486
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