• DocumentCode
    2743534
  • Title

    Terahertz Emission Properties of p-InAs Surface Radiation under Different Excitations

  • Author

    Zhao, Guozhong ; Sun, Hongqi ; Tian, Yan ; Zhang, Cunlin

  • Author_Institution
    Capital Normal Univ., Beijing
  • fYear
    2006
  • fDate
    18-22 Sept. 2006
  • Firstpage
    544
  • Lastpage
    544
  • Abstract
    Terahertz (THz) emission properties of p-InAs surface radiation under the different excitations of femtosecond pulses are studied by means of time-domain spectroscopy. The experimental results show that the spectral waveform and amplitude of terahertz radiation are different for the excitations with different wavelengths. The full-width of half-maximum (FWHM) of THz radiation excited by the short wavelength of pulse is larger than that of the long wavelength. THz emission strength increases with increasing of pump wavelength. The peak amplitude of THz pulse increases linearly with increasing of the excitation power. It provides a useful reference for the application of THz emitter.
  • Keywords
    arsenic compounds; emission; indium compounds; submillimetre wave lasers; submillimetre wave spectroscopy; time-domain analysis; FWHM; InAs; femtosecond pulse; full-width-half-maximum; p-InAs surface radiation; spectral waveform; terahertz emission properties; terahertz radiation; time-domain spectroscopy; Crystals; Doping; Frequency; Laser excitation; Material properties; Optical pulses; Physics; Spectroscopy; Sun; Surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0400-2
  • Electronic_ISBN
    1-4244-0400-2
  • Type

    conf

  • DOI
    10.1109/ICIMW.2006.368752
  • Filename
    4222486