Title :
InGaAs/InGaAsP strained SQW LD grown on In0.05Ga0.95As ternary substrate
Author :
Shoji, H. ; Uchida, T. ; Kusunoki, T. ; Matsuda, M. ; Kurakake, H. ; Yamazaki, S. ; Nakajima, K. ; Ishikawa, H.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
A uniform In0.05Ga0.95As ternary substrate was grown and InGaAs/InGaAsP SQW LDs were fabricated on the substrate for the first time. Low threshold current density of 222 A/cm2 and an excellent characteristic temperature of 221 K were achieved
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; quantum well lasers; vapour phase epitaxial growth; 221 K; In0.05Ga0.95As; In0.05Ga0.95As ternary substrate; InGaAs-InGaAsP; InGaAs/InGaAsP; characteristic temperature; low threshold current density; strained SQW laser diode; Electrodes; Gallium arsenide; Gold; Impurities; Indium gallium arsenide; Temperature dependence;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.518900
