• DocumentCode
    2743610
  • Title

    InGaAs/InGaAsP strained SQW LD grown on In0.05Ga0.95As ternary substrate

  • Author

    Shoji, H. ; Uchida, T. ; Kusunoki, T. ; Matsuda, M. ; Kurakake, H. ; Yamazaki, S. ; Nakajima, K. ; Ishikawa, H.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • fYear
    1994
  • fDate
    19-23 Sep 1994
  • Firstpage
    22
  • Lastpage
    23
  • Abstract
    A uniform In0.05Ga0.95As ternary substrate was grown and InGaAs/InGaAsP SQW LDs were fabricated on the substrate for the first time. Low threshold current density of 222 A/cm2 and an excellent characteristic temperature of 221 K were achieved
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; quantum well lasers; vapour phase epitaxial growth; 221 K; In0.05Ga0.95As; In0.05Ga0.95As ternary substrate; InGaAs-InGaAsP; InGaAs/InGaAsP; characteristic temperature; low threshold current density; strained SQW laser diode; Electrodes; Gallium arsenide; Gold; Impurities; Indium gallium arsenide; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1994., 14th IEEE International
  • Conference_Location
    Maui, HI
  • Print_ISBN
    0-7803-1754-8
  • Type

    conf

  • DOI
    10.1109/ISLC.1994.518900
  • Filename
    518900
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2743610