• DocumentCode
    2743679
  • Title

    High T0 1.3 μm InGaAs strained single quantum well laser with InGaP wide band-gap clad layers

  • Author

    Kurakake, H. ; Uchida, T. ; Kubota, K. ; Ogita, S. ; Soda, H. ; Yamasaki, S.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • fYear
    1994
  • fDate
    19-23 Sep 1994
  • Firstpage
    24
  • Lastpage
    25
  • Abstract
    1.3 μm laser simulation taking hot carriers into account indicated the effectiveness of wide band-gap clad layers for improving laser performance. Lasers fabricated with InGaP cladding layers based on these calculations exhibited the high T0 of 100 K
  • Keywords
    III-V semiconductors; claddings; gallium arsenide; gallium compounds; hot carriers; indium compounds; optical fabrication; quantum well lasers; vapour phase epitaxial growth; 1.3 mum; 100 K; InGaAs; InGaAs-InGaP; InGaP; hot carriers; laser simulation; strained single quantum well laser; wide band-gap clad layers; Charge carrier processes; Indium gallium arsenide; Indium phosphide; Mirrors; Photonic band gap; Pulse measurements; Quantum well lasers; Temperature dependence; Threshold current; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1994., 14th IEEE International
  • Conference_Location
    Maui, HI
  • Print_ISBN
    0-7803-1754-8
  • Type

    conf

  • DOI
    10.1109/ISLC.1994.518901
  • Filename
    518901
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2743679