DocumentCode :
2743679
Title :
High T0 1.3 μm InGaAs strained single quantum well laser with InGaP wide band-gap clad layers
Author :
Kurakake, H. ; Uchida, T. ; Kubota, K. ; Ogita, S. ; Soda, H. ; Yamasaki, S.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fYear :
1994
fDate :
19-23 Sep 1994
Firstpage :
24
Lastpage :
25
Abstract :
1.3 μm laser simulation taking hot carriers into account indicated the effectiveness of wide band-gap clad layers for improving laser performance. Lasers fabricated with InGaP cladding layers based on these calculations exhibited the high T0 of 100 K
Keywords :
III-V semiconductors; claddings; gallium arsenide; gallium compounds; hot carriers; indium compounds; optical fabrication; quantum well lasers; vapour phase epitaxial growth; 1.3 mum; 100 K; InGaAs; InGaAs-InGaP; InGaP; hot carriers; laser simulation; strained single quantum well laser; wide band-gap clad layers; Charge carrier processes; Indium gallium arsenide; Indium phosphide; Mirrors; Photonic band gap; Pulse measurements; Quantum well lasers; Temperature dependence; Threshold current; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
Type :
conf
DOI :
10.1109/ISLC.1994.518901
Filename :
518901
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2743679
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