Title :
1.55 μm strained GaInAs/AlGaInAs MQW lasers with a multi-quantum barrier
Author :
Shimizu, H. ; Fukushima, T. ; Nishikata, K. ; Hirayama, Y. ; Irikawa, M.
Author_Institution :
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
The authors have fabricated 1.55 μm strained GaInAs/AlGaInAs MQW lasers with a multiquantum barrier (MQB). A reduction of carrier leakage upon incorporation of the MQB structure was demonstrated experimentally in long-wavelength lasers for the first time
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 1.55 mum; GaInAs-AlGaInAs; GaInAs/AlGaInAs lasers; MQW lasers; carrier leakage; fabrication; long-wavelength lasers; multi-quantum barrier; strained multi-quantum well lasers; Degradation; Electrons; Laser theory; Quantum well devices; Spontaneous emission; Temperature dependence; Temperature measurement; Threshold current; Waveguide lasers; X-ray lasers;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.518902
