Title :
Development of far-infrared semiconductor detectors
Author_Institution :
Dept. of Appl. Phys., Jiao Tong Univ., Shanghai, China
Abstract :
The recent developments of semiconductor Si, Ge and GaAs blocked impurity band detectors (BIBs), and Si and GaAs homojunction interfacial work-function internal photoemission (HIWIP) far-infrared (FIR) detectors in extending the wavelength coverage and improving the focal plane array (FPA) performance are reviewed. The advantages, current status, and potential limitations of these FIR detectors are also discussed.
Keywords :
focal planes; photoemission; semiconductor devices; submillimetre wave detectors; work function; FIR semiconductor detectors; FPA performance; GaAs; Ge; HIWIP FIR detectors; Si; blocked impurity band detectors; far-infrared semiconductor detectors; focal plane array performance; homojunction interfacial work-function internal photoemission detectors; wavelength coverage; Absorption; Doping; Finite impulse response filter; Gallium arsenide; Infrared detectors; Photoconducting materials; Photoconductivity; Photoelectricity; Sensor arrays; Space missions;
Conference_Titel :
Infrared and Millimeter Waves, 2000. Conference Digest. 2000 25th International Conference on
Conference_Location :
Beijing, China
Print_ISBN :
0-7803-6513-5
DOI :
10.1109/ICIMW.2000.893005
