DocumentCode
2743737
Title
Development of far-infrared semiconductor detectors
Author
Shen, W.Z.
Author_Institution
Dept. of Appl. Phys., Jiao Tong Univ., Shanghai, China
fYear
2000
fDate
12-15 Sept. 2000
Firstpage
215
Lastpage
216
Abstract
The recent developments of semiconductor Si, Ge and GaAs blocked impurity band detectors (BIBs), and Si and GaAs homojunction interfacial work-function internal photoemission (HIWIP) far-infrared (FIR) detectors in extending the wavelength coverage and improving the focal plane array (FPA) performance are reviewed. The advantages, current status, and potential limitations of these FIR detectors are also discussed.
Keywords
focal planes; photoemission; semiconductor devices; submillimetre wave detectors; work function; FIR semiconductor detectors; FPA performance; GaAs; Ge; HIWIP FIR detectors; Si; blocked impurity band detectors; far-infrared semiconductor detectors; focal plane array performance; homojunction interfacial work-function internal photoemission detectors; wavelength coverage; Absorption; Doping; Finite impulse response filter; Gallium arsenide; Infrared detectors; Photoconducting materials; Photoconductivity; Photoelectricity; Sensor arrays; Space missions;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2000. Conference Digest. 2000 25th International Conference on
Conference_Location
Beijing, China
Print_ISBN
0-7803-6513-5
Type
conf
DOI
10.1109/ICIMW.2000.893005
Filename
893005
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