Boron-doped microcrystalline-phase involved amorphous silicon oxide windows prepared by Cat-CVD

Author

Matsumoto, Yasuhiro ; Yu, Zhenrui

Author_Institution

Electr. Eng. Dept., Centro de Investigacion y de Estudios Avanzados del IPN, Mexico City

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

1

Lastpage

4

Abstract

Different amounts of oxygen involved boron-doped hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (muc-Si:H) deposition were carried out using catalytic chemical-vapor deposition (Cat-CVD) process. Pure silane (SiH₄), hydrogen (H ₂), oxygen (O₂), and diluted diborane (B₂H₆) gases were used at the deposition pressure of 0.1 to 0.5 Torr. The tungsten catalyst temperature (T_fil) was varied from 1700 to 2100degC. Sample transmittance measurement shows an optical-band gap (Eg_opt) variation from 1.45 to 2.1 eV. X-ray diffraction (XRD) spectra have revealed silicon microcrystalline phases for the samples prepared at the temperature greater than T_fil~1900degC. For the used silicon oxide deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations

Keywords

X-ray diffraction; amorphous state; boron; catalysis; chemical vapour deposition; energy gap; silicon compounds; solar cells; tungsten; 0.1 to 0.5 Torr; 1700 to 2100 C; B₂H₆; Cat-CVD process; H₂; O₂; SiH₄; SiO_x:B; SiO_x:H; X-ray diffraction spectra; XRD; a-Si:H; amorphous silicon oxide windows; boron-doped hydrogenated amorphous silicon; boron-doped microcrystalline-phase; catalytic chemical-vapor deposition; deposition pressure; diluted diborane; hydrogen; hydrogenated microcrystalline silicon; optical-band gap; oxygen; sample transmittance measurement; silane; solar cell windows; tungsten catalyst temperature; tungsten filament degradation; Amorphous silicon; Chemical processes; Gases; Hydrogen; Optical diffraction; Optimized production technology; Temperature; Tungsten; X-ray diffraction; X-ray scattering; Boron-doped Silicon Oxide; Catalytic-CVD; Microcrystalline silicon; Solar Cell Windows;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineering, 2006 3rd International Conference on

Conference_Location

Veracruz

Print_ISBN

1-4244-0402-9

Electronic_ISBN

1-4244-0403-7

Type

conf

DOI

10.1109/ICEEE.2006.251848

Filename

4017933