Title :
Integrated Silicon P-I-N-Structures for Modulation in Terahertz Range
Author :
Grimalsky, V. ; Chillon, D. ; Gutierrez-D, E. ; Koshevaya, S.
Author_Institution :
Nat. Inst. for Astrophys., Opt., & Electron., Puebla
Abstract :
Modulators of terahertz (THz) range on the base of silicon integrated p-i-n-structures are investigated. The generalization of well-known Fletcher boundary conditions at the injecting electrodes has been put forward for the case of highly doped p++, n++ regions. The problem of double injection into i-region has been simulated in a two-dimensional case. The investigations of modulational properties of integrated p-i-n-structures in THz range have demonstrated a possibility to use these structures up to the frequencies ap6 THz
Keywords :
electrodes; heavily doped semiconductors; modulators; semiconductor junctions; silicon; submillimetre wave devices; 6 THz; Fletcher boundary condition; Si; THz; doped region; electrode; modulation properties; modulator; silicon integrated p-i-n-structure; terahertz range; Astrophysics; Boundary conditions; Charge carrier processes; Electrodes; Frequency; Integrated optics; Millimeter wave technology; Optical modulation; Silicon; Spontaneous emission; Terahertz electromagnetic waves; highly doped regions; integrated p-i-n-structures; wide-band modulation;
Conference_Titel :
Electrical and Electronics Engineering, 2006 3rd International Conference on
Conference_Location :
Veracruz
Print_ISBN :
1-4244-0402-9
Electronic_ISBN :
1-4244-0403-7
DOI :
10.1109/ICEEE.2006.251850
