DocumentCode
2743930
Title
Developments of terahertz quantum cascade lasers in NICT
Author
Hosako, Iwao ; Sekine, Naruhiko ; Yasuda, Hiroaki ; Hirakawa, Kazuhiko
Author_Institution
Nat. Inst. of inf. & Commun. Technol., Koganei
fYear
2006
fDate
18-22 Sept. 2006
Firstpage
564
Lastpage
564
Abstract
We fabricated terahertz quantum cascade lasers (THz-QCL) using a resonant LO phonon depopulation scheme, which were made of both GaAs/AlGaAs material system and GaSb/AlSb material system. The GaAs/AlGaAs THz-QCL has successfully demonstrated a high peak power (~ few tens of milliwatts) operation and a high operating temperature (~123K). We also report research activities of the THz-QCL in NICT.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; quantum cascade lasers; submillimetre wave lasers; GaAs-AlGaAs; GaSb-AlSb; NICT; resonant LO phonon depopulation scheme; terahertz quantum cascade lasers; Gallium arsenide; Gas lasers; Laser transitions; Molecular beam epitaxial growth; Optical materials; Phonons; Quantum cascade lasers; Resonance; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0400-2
Electronic_ISBN
1-4244-0400-2
Type
conf
DOI
10.1109/ICIMW.2006.368772
Filename
4222506
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