High-power and high-speed performance of gain-coupled 1.3 μm strained-layer MQW DFB lasers

Author

Lu, H. ; Blaauw, C. ; Benyon, B. ; Makino, T.

Author_Institution

Bell-Northern Res., Ottawa, Ont., Canada

fYear

1994

fDate

19-23 Sep 1994

Firstpage

51

Lastpage

52

Abstract

Summary form only given. High power and high modulation bandwidth 1.3 μm DFB InGaAsP QW lasers with gain coupling in a strained-layer MQW active region are reported for the first time. Due to the nature of the gain coupling effect, devices show lasing spectra with a consistently high single mode yield

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser modes; optical communication equipment; optical couplers; quantum well lasers; 1.3 μm strained-layer MQW DFB lasers; 1.3 mum; InGaAsP; InGaAsP QW lasers; consistently high single mode yield; gain coupling; gain coupling effect; gain-coupled; high modulation bandwidth; high-power lasers; high-speed performance; lasing spectra; strained-layer MQW active region; Bandwidth; Fiber lasers; Laser modes; MOCVD; Optical coupling; Optical fiber communication; Optical fiber devices; Power generation; Power lasers; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.518914

Filename

518914