Title :
High-power and high-speed performance of gain-coupled 1.3 μm strained-layer MQW DFB lasers
Author :
Lu, H. ; Blaauw, C. ; Benyon, B. ; Makino, T.
Author_Institution :
Bell-Northern Res., Ottawa, Ont., Canada
Abstract :
Summary form only given. High power and high modulation bandwidth 1.3 μm DFB InGaAsP QW lasers with gain coupling in a strained-layer MQW active region are reported for the first time. Due to the nature of the gain coupling effect, devices show lasing spectra with a consistently high single mode yield
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser modes; optical communication equipment; optical couplers; quantum well lasers; 1.3 μm strained-layer MQW DFB lasers; 1.3 mum; InGaAsP; InGaAsP QW lasers; consistently high single mode yield; gain coupling; gain coupling effect; gain-coupled; high modulation bandwidth; high-power lasers; high-speed performance; lasing spectra; strained-layer MQW active region; Bandwidth; Fiber lasers; Laser modes; MOCVD; Optical coupling; Optical fiber communication; Optical fiber devices; Power generation; Power lasers; Quantum well devices;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.518914
