Title :
Characterization of heterostructure barrier varactors for 255 GHz tripling operation
Author :
Saglam, M. ; Bozzi, M. ; Rodriguez-Girons, M. ; Lin, C. ; Megej, A. ; Perregrini, L. ; Hartnagel, H.L.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. Darmstadt, Germany
Abstract :
Al/sub 0.7/Ga/sub 0.3/As/GaAs and In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HBV diodes with different mesa diameters have been fabricated and their DC characteristics have been measured. These characteristics are used by a combined genetic algorithm/harmonic balance simulator to calculate the optimum impedance and output power at 255 GHz. A comparison of the conversion efficiencies is presented for the two material systems.
Keywords :
III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; genetic algorithms; indium compounds; millimetre wave frequency convertors; varactors; 255 GHz; Al/sub 0.7/Ga/sub 0.3/As-GaAs; DC characteristics; In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As-InP; conversion efficiency; frequency tripling; genetic algorithm; harmonic balance simulator; heterostructure barrier varactor diode; Capacitance-voltage characteristics; Circuits; Diodes; Fabrication; Gallium arsenide; Genetics; Impedance; Indium compounds; Indium phosphide; Varactors;
Conference_Titel :
Infrared and Millimeter Waves, 2000. Conference Digest. 2000 25th International Conference on
Conference_Location :
Beijing, China
Print_ISBN :
0-7803-6513-5
DOI :
10.1109/ICIMW.2000.893038
