Title :
A new technology process for packaged millimeter-wave Si-IMPATT diodes
Author :
Luschas, M. ; Wollitzer, M. ; Luy, J.-F.
Author_Institution :
Arbeitsbereich Hochfrequenztech., Tech. Univ. Hamburg-Harburg, Germany
Abstract :
This paper presents a technology process which integrates a diode and its housing in a packaged millimeter-wave Si-IMPATT device. The housing consists of a high resistivity Si substrate, on which the MBE layer is grown. An etch stop in KOH is the key step in the process. The device is thermocompression bonded in a single step onto a diamond heat sink, unlike the three step bonding for conventional diodes with quartz ring housing.
Keywords :
IMPATT diodes; elemental semiconductors; millimetre wave diodes; semiconductor device packaging; silicon; KOH etch stop; MBE layer; Si; diamond heat sink; high-resistivity silicon substrate; housing; millimeter-wave Si IMPATT diode; packaging technology; thermocompression bonding; Bonding; Conductivity; Diodes; Etching; Gold; Heat sinks; Millimeter wave technology; Packaging; Plasma measurements; Protection;
Conference_Titel :
Infrared and Millimeter Waves, 2000. Conference Digest. 2000 25th International Conference on
Conference_Location :
Beijing, China
Print_ISBN :
0-7803-6513-5
DOI :
10.1109/ICIMW.2000.893039
