Ultrafast gain and refractive index dynamics of semiconductor amplifiers measured by four-wave mixing

Author

D´Ottavi, A. ; Iannone, Eugenio ; Mecozzi, A. ; Scotti, S. ; Spano, P. ; Dall´Ara, R. ; Guekos, G. ; Eckner, J.

Author_Institution

Fondazione Ugo Bordoni, Rome, Italy

fYear

1994

fDate

19-23 Sept. 1994

Firstpage

63

Lastpage

64

Abstract

Measurements of four-wave mixing in traveling wave semiconductor optical amplifiers are extended up to frequency detunings between pump and probe as high as 4.3 THz. The 35 fs equivalent time resolution is, to our knowledge, the highest achieved to date. Experimental evidence of nonlinear processes faster than spectral hole burning is obtained for the first time by using a frequency domain technique.

Keywords

high-speed optical techniques; laser tuning; laser variables measurement; multiwave mixing; optical hole burning; refractive index; semiconductor lasers; travelling wave amplifiers; 35 fs; 4.3 THz; four-wave mixing; frequency detunings; frequency domain technique; nonlinear processes; refractive index dynamics; semiconductor amplifiers; spectral hole burning; time resolution; traveling wave semiconductor optical amplifier; ultrafast gain; Gain measurement; Nonlinear optics; Optical amplifiers; Optical mixing; Optical pumping; Optical saturation; Probes; Refractive index; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI, USA

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.518920

Filename

518920