Title :
Long wavelength OEIC on GaAs-on-InP heterostructure
Author :
Suzuki, A. ; Itoh, T. ; Shikada, M.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
The authors describe long wavelength OEICs on GaAs-on-InP heterostructures. The InP-based optical components and GaAs integrated circuits are monolithically integrated on InP substrates. The great potential of GaAs-on-InP heterostructure for high-performance long wavelength OEICs is demonstrated
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; GaAs-InP; III-V semiconductors; long wavelength OEICs; monolithic integration; optoelectronic integrated circuits;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
