• DocumentCode
    274452
  • Title

    GaInAs monolithic photoreceiver integrating PIN/JFET with diffused junctions and a resistor

  • Author

    Renaud, J.C. ; Lugiez, F. ; Vuye, S. ; Allovon, M. ; Nguyen, L. ; Scavannec, A. ; Bourdon, B.

  • Author_Institution
    CNET, Lab. de Bagneux, France
  • fYear
    1988
  • fDate
    11-15 Sep 1988
  • Firstpage
    21
  • Abstract
    An integrated PIN/JFET/resistor has been developed using a GaInAs epitaxial structure grown on a planar substrate with four layers allowing separate optimization of both active devices. Owing to the good performances and high reliability of individual components, the sensitivity of such monolithic photoreceivers is evaluated as -30 dBm at 560 Mbit/s (10-9 bit error rate)
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; monolithic integrated circuits; optical communication equipment; p-i-n diodes; photodetectors; receivers; sensitivity; 560 Mbit/s; GaInAs monolithic photoreceiver; III-V semiconductors; diffused junctions; integrated PIN/JFET/resistor; integrated optoelectronics; monolithic photoreceivers; optical communication; reliability; resistor; sensitivity;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
  • Conference_Location
    Brighton
  • Type

    conf

  • Filename
    93512
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=274452