Title :
Limits to the performance of transverse and waveguide MQW electroabsorption and electrorefraction modulators
Author :
Stevens, P.J. ; Whitehead, M. ; Bradley, P.J. ; Rivers, A.W. ; Parry, G. ; Roberts, J.S. ; Mistry, P. ; Pate, M.A. ; Hill, G.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll., London, UK
Abstract :
The authors evaluate theoretically the ultimate limits to the attainable transmission change of transverse GaAs/GaAlAs MQW electroabsorption modulators. They report new experimental results of transverse device performance which show that the performance of currently realisable transverse modulators is close to theoretical limits. Finally they show that when the PIN structure is used as a waveguide the amplitude and phase modulation achievable do depend on background doping but limiting performances can be achieved with current growth techniques
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electro-optical effects; electroabsorption; gallium arsenide; optical modulation; semiconductor quantum wells; GaAs-GaAlAs; III-V semiconductors; MQW electroabsorption modulators; PIN structure; amplitude modulation; electrorefraction modulators; phase modulation; transverse device performance; transverse modulators; waveguide modulators;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
