Title :
Temperature and output power dependence of carrier overflow and internal loss in InGaAs/InGaAsP multiple quantum well lasers
Author :
Tessler, N. ; Mikhaelashvili, V. ; Nagar, R. ; Eisenstein, G. ; Dentai, A.G. ; Joyner, C.H. ; Chandrasekhar, S.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
The authors demonstrate temperature and output power dependence of internal loss in multiple quantum well lasers resulting from carrier overflow effects
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; optical losses; quantum well lasers; waveguide lasers; InGaAs-InGaAsP; InGaAs/InGaAsP; carrier overflow; carrier overflow effects; internal loss; multiple quantum well lasers; output power dependence; temperature dependence; Capacitive sensors; Density measurement; Indium gallium arsenide; Length measurement; Loss measurement; Power generation; Predictive models; Temperature dependence; Temperature measurement;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.518922
