Title :
A Silicon-based Voltage Doubler: Preliminary Results
Author :
Corona-Murguía, O. ; Sandoval-Ibarra, F.
Author_Institution :
CINVESTAV-Guadalajara Unit
Abstract :
This paper presents experimental results of a DC-DC converter based on the SC approach. In this design to power digital circuitry a 1.5 V voltage source has been used to emulate the energy to be supplied by a single battery. The voltage source is useful also to start the times2 operation. In order to operate in a correct way the MOS switches a boost circuit based on a single NMOS gain stage was also integrated. A p-n diode in conjunction with the boost circuit define an initial condition VOUT(t=0)=Vbi. The capacitors used are external components. This project has been designed according technological design rules of a 1.5 mum CMOS process. From experimental results we can conclude that the error between experimental data and theory is of the order of 2%
Keywords :
CMOS digital integrated circuits; DC-DC power convertors; field effect transistor switches; silicon; voltage multipliers; 1.5 V; 1.5 micron; DC-DC converter; MOS switches; NMOS gain; SC approach; p-n diode; power digital circuitry design; silicon-based voltage doubler; Batteries; CMOS technology; DC-DC power converters; Diodes; Integrated circuit technology; MOS capacitors; MOS devices; Switches; Switching circuits; Voltage; DC-DC converters; MOS technology; lumped circuits; switched-capacitors;
Conference_Titel :
Electrical and Electronics Engineering, 2006 3rd International Conference on
Conference_Location :
Veracruz
Print_ISBN :
1-4244-0402-9
Electronic_ISBN :
1-4244-0403-7
DOI :
10.1109/ICEEE.2006.251895