The influence of annealing parameters on the structure and optical and electrical properties of VO/sub x/ films

Author

Xiong Bifeng ; Yi Xinjian ; Li Yi ; Chen Sihai

Author_Institution

State Key Lab. of Laser Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China

fYear

2000

fDate

12-15 Sept. 2000

Firstpage

363

Lastpage

364

Abstract

Vanadium films have been deposited onto Si and quarts substrates by reactive ion-beam sputtering. The substrates are followed by annealing post-treatment. The treatment is performed in proper oxygen flow and temperature. The stoichiometry of thin films is measured by X-ray Photoelectron Spectroscopy (XPS) and X-Ray diffraction spectrum (XRD). The experimental results show that the VO/sub 2/ thin films have been formed by reactive ion-beam sputtering and annealing post-treatment, and that the resistivity change of VO/sub 2/ thin films by a factor larger than 10/sup 3/ can be obtained. It is evident that the annealing process is important to VO/sub 2/ thin films with excellent optical and electrical properties.

Keywords

X-ray diffraction; X-ray photoelectron spectra; annealing; infrared spectra; insulating thin films; sputtered coatings; stoichiometry; vanadium compounds; VO/sub 2/; VO/sub 2/ thin films; VO/sub x/ films; X-Ray diffraction; XPS; annealing parameters; electrical properties; optical properties; reactive ion-beam sputtering; stoichiometry; structure; Annealing; Conductivity; Optical diffraction; Optical films; Semiconductor films; Spectroscopy; Sputtering; Temperature; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2000. Conference Digest. 2000 25th International Conference on

Conference_Location

Beijing, China

Print_ISBN

0-7803-6513-5

Type

conf

DOI

10.1109/ICIMW.2000.893065

Filename

893065