Title :
A GaAs 16×16 MESFET crosspoint switch at 1700 Mbits/sec
Author :
Scott, G.R. ; Anderson, C.I.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A fully integrated GaAs MESFET 16×16 crosspoint switch has been fabricated on a 3×4 mm chip using a 1 μm super-buffer logic (SBL) design consisting of approximately 1300 equivalent NOR-3 gates and operating at 800 mW of power. A 99% confidence bit error rate (BER) better than 10-13 was obtained at a 1.7 Gbit/sec rate using a 27-1 pseudo-random NRZ sequence
Keywords :
III-V semiconductors; electronic switching systems; field effect integrated circuits; gallium arsenide; logic arrays; semiconductor switches; 16*16 MESFET crosspoint switch; 1700 Mbit/s; 800 mW; GaAs; III-V semiconductors; NOR-3 gates; bit error rate; pseudo-random NRZ sequence; super buffer logic design;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
