• DocumentCode
    274519
  • Title

    Optical switching operation due to field induced refractive-index variation in 1.3 μm GaInAsP/InP MQW structures

  • Author

    Kikugawa, T. ; Shimomura, K. ; Ravikumar, K.G. ; Izumi, A. ; Matsubara, K. ; Arai, S. ; Suematsu, Y.

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
  • fYear
    1988
  • fDate
    11-15 Sep 1988
  • Firstpage
    288
  • Abstract
    A GaInAsP/InP MQW intersectional switch using field-induced refractive index variation was fabricated and operated for the first time. Refractive index variation for TE polarized light was found to be 2 times larger than that for TM polarized one, and was estimated to be 0.45% in the QW layer at the bias voltage of -9 V
  • Keywords
    III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; optical switches; refractive index; semiconductor superlattices; semiconductor switches; GaInAsP-InP; III-V semiconductors; MQW intersectional switch; TE polarized light; TM polarized one; field induced refractive-index variation;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
  • Conference_Location
    Brighton
  • Type

    conf

  • Filename
    93579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=274519