Title :
Optical switching operation due to field induced refractive-index variation in 1.3 μm GaInAsP/InP MQW structures
Author :
Kikugawa, T. ; Shimomura, K. ; Ravikumar, K.G. ; Izumi, A. ; Matsubara, K. ; Arai, S. ; Suematsu, Y.
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
A GaInAsP/InP MQW intersectional switch using field-induced refractive index variation was fabricated and operated for the first time. Refractive index variation for TE polarized light was found to be 2 times larger than that for TM polarized one, and was estimated to be 0.45% in the QW layer at the bias voltage of -9 V
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; optical switches; refractive index; semiconductor superlattices; semiconductor switches; GaInAsP-InP; III-V semiconductors; MQW intersectional switch; TE polarized light; TM polarized one; field induced refractive-index variation;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
