High gain AlGaAs/GaAs HBTs grown by MOCVD

Author

Welser, R.E. ; Pan, N. ; Vu, D.P. ; Knowles, M.A. ; Taulananda, I. ; Miller, J.G. ; Stillman, G.E.

Author_Institution

Kopin Corp., Taunton, MA, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

451

Lastpage

454

Abstract

We report on a study of the DC characteristics of MOCVD-grown AlGaAs/GaAs HBT structures with C-doped (3-5E19 cm^-3) base layers. Analysis of several series of AlGaAs/GaAs HBTs suggest the DC gain is dependent upon base current only, and that the base current is largely limited by bulk recombination in the neutral base. As part of this study, we have obtained DC gains of ~250 (@ 1kA/cm²) at a base sheet resistance of 330 Ohms/square, which we believe is the highest DC gain ever observed for an AlGaAs/GaAs HBT at this base sheet resistance. Proportionally high DC gains have also been realized in HBTs with base sheet resistance values as low as 115 Ohms/square

Keywords

CVD coatings; III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; AlGaAs-GaAs; AlGaAs/GaAs HBT; C-doped base layer; DC gain; MOCVD growth; base current; base sheet resistance; bulk recombination; Bipolar transistors; Current measurement; Doping; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; MOCVD; Microelectronics; Radiative recombination; Sheet materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711693

Filename

711693