DocumentCode :
274528
Title :
InGaAsP/InP opto-electronic devices fabricated from MOVPE wafers
Author :
Spillett, R.E.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
fYear :
1988
fDate :
11-15 Sep 1988
Firstpage :
328
Abstract :
Atmospheric MOVPE has been developed to produce a range of InP/GaInAsP device structures uniformly over 2" InP wafers. State of art Fabry-Perot (Ith 6mA) and DFB lasers (linewidth 3 MHz), ELEDs, and planar detectors (Id as low as 8 pA at -5V) are reported, together with reliability data
Keywords :
III-V semiconductors; avalanche photodiodes; distributed feedback lasers; gallium arsenide; indium compounds; infrared detectors; light emitting diodes; semiconductor epitaxial layers; semiconductor junction lasers; 1.3 micron; 2 in; 6 mA; 8 pA; DFB lasers; ELEDs; Fabry Perot lasers; III-V semiconductor; InGaAsP-InP optoelectronic devices; MOVPE wafers; PIN photodiodes; atmospheric MOVPE; avalanche photodiodes; edge emitting LED; planar detectors; reliability data;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
Type :
conf
Filename :
93589
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=274528
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