• DocumentCode
    274528
  • Title

    InGaAsP/InP opto-electronic devices fabricated from MOVPE wafers

  • Author

    Spillett, R.E.

  • Author_Institution
    British Telecom Res. Labs., Ipswich, UK
  • fYear
    1988
  • fDate
    11-15 Sep 1988
  • Firstpage
    328
  • Abstract
    Atmospheric MOVPE has been developed to produce a range of InP/GaInAsP device structures uniformly over 2" InP wafers. State of art Fabry-Perot (Ith 6mA) and DFB lasers (linewidth 3 MHz), ELEDs, and planar detectors (Id as low as 8 pA at -5V) are reported, together with reliability data
  • Keywords
    III-V semiconductors; avalanche photodiodes; distributed feedback lasers; gallium arsenide; indium compounds; infrared detectors; light emitting diodes; semiconductor epitaxial layers; semiconductor junction lasers; 1.3 micron; 2 in; 6 mA; 8 pA; DFB lasers; ELEDs; Fabry Perot lasers; III-V semiconductor; InGaAsP-InP optoelectronic devices; MOVPE wafers; PIN photodiodes; atmospheric MOVPE; avalanche photodiodes; edge emitting LED; planar detectors; reliability data;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
  • Conference_Location
    Brighton
  • Type

    conf

  • Filename
    93589
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=274528