DocumentCode :
274529
Title :
Extremely low threshold 1.3 μm DFB-PPIBH laser diode applied to 1 Gbit/sec zero-bias RZ modulation
Author :
Kakimoto, S. ; Ohkura, Y. ; Takemoto, A. ; Yoshida, N. ; Namizaki, H. ; Susaki, W. ; Shibayama, K.
Author_Institution :
LSI Res. & Dev. Lab., Mitsubishi Elect. Corp., Hyogo, Japan
fYear :
1988
fDate :
11-15 Sep 1988
Firstpage :
337
Abstract :
The extremely low threshold (Ith=3.1 mA) and stable single longitudinal mode (SMSR=40 dB) 1.3 μm DFB-PPIBH laser diode has been developed by the MOCVD/LPE hybrid process. Using this laser diode, the 1 Gbit/sec zero-bias RZ modulation has been successfully demonstrated
Keywords :
distributed feedback lasers; laser modes; laser transitions; liquid phase epitaxial growth; optical modulation; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1 Gbit/s; 1.3 micron; 3.1 mA; DFB-PPIBH laser diode; MOCVD/LPE hybrid process; extremely low threshold; stable single longitudinal mode; zero-bias RZ modulation;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
Type :
conf
Filename :
93590
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=274529
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