Title :
1.5 μm InGaAsP/InP BH-BIG-DBR lasers
Author :
Nomura, T. ; Watanabe, T. ; Katsuda, H. ; Suzaki, S.
Author_Institution :
Opto-Electron. Lab., Fujikura Ltd, Chiba, Japan
Abstract :
Taking advantage of the bundle-integrated-guide (BIG) structure proposed by Tohmori et al. (1985), the authors have developed a high productivity process for BIG-distributed-Bragg-reflector (DBR) lasers emitting at 1.5 μm with good lasing characteristics
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser transitions; semiconductor junction lasers; 1.5 micron; III-V semiconductor; InGaAsP-InP; InGaAsP/InP BH-BIG-DBR lasers; active region; bundle-integrated-guide; distributed Bragg reflector; high productivity process;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
