Title :
Advanced noise investigations on InGaAsP/InP DFB lasers
Author :
Idler, W. ; Schweizer, H. ; Lang, R.J. ; Klenk, M. ; Wunstel, K. ; Mozer, A.
Author_Institution :
Standard Elektrik Lorenz AG, Res. Centre, Stuttgart, West Germany
Abstract :
Terminal electrical noise (TEN) measurements on DFB lasers are presented. The authors employed this technique for studying the intrinsic laser behaviour, the optical feedback sensitivity and for an advanced laser characterization. TEN results indicate: changes in emission spectra, backreflection sensitivity depending on the κL-product and sidebands of the field spectrum
Keywords :
III-V semiconductors; distributed feedback lasers; electron device noise; gallium arsenide; indium compounds; semiconductor junction lasers; InGaAsP-InP; InGaAsP/InP DFB lasers; backreflection sensitivity; emission spectra; field spectrum; intrinsic laser behaviour; laser characterization; noise; optical feedback sensitivity; semiconductor; sidebands; terminal electrical noise;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
