DocumentCode :
2745400
Title :
A Surrounding Gate Transistor (SGT) Gain Cell For Ultra High Density Drams
Author :
Terauchi, M. ; Nitayama, A. ; Horiguchi, F. ; Masuoka, F.
Author_Institution :
TOSHIBA Corporation
fYear :
1993
fDate :
17-19 May 1993
Firstpage :
21
Lastpage :
22
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on
Conference_Location :
Kyoto, Japan
Type :
conf
DOI :
10.1109/VLSIT.1993.760225
Filename :
760225
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2745400
