DocumentCode
2745404
Title
High-power and high-linearity photodiodes
Author
Beling, A. ; Li, Z. ; Fu, Y. ; Pan, H. ; Campbell, J.C.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
fYear
2011
fDate
9-13 Oct. 2011
Firstpage
19
Lastpage
20
Abstract
Recent developments of modified uni-traveling carrier (MUTC) photodiodes capable of delivering high output RF power signals with low intermodulation distortions are reviewed. A flip-chip-bonded charge-compensated MUTC photodiode achieved a record-high output power of 0.75 W (28.8 dBm) at 15 GHz and a third order output intercept point (OIP3) up to 59 dBm. Power-combined and traveling wave photodiode arrays are promising candidates to further increase output power and linearity.
Keywords
intermodulation distortion; microwave photonics; optical arrays; photodiodes; MUTC; RF power signals; flip-chip-bonded charge-compensation; frequency 15 GHz; intermodulation distortions; linearity; microwave photonics; modified unitraveling carrier photodiodes; output intercept point; output power; power 0.75 W; Microwave photonics; Photoconductivity; Photodiodes; Power generation; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (PHO), 2011 IEEE
Conference_Location
Arlington, VA
Print_ISBN
978-1-4244-8940-4
Type
conf
DOI
10.1109/PHO.2011.6110404
Filename
6110404
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