Pd/Ge-based ohmic contacts to n-InGaAs and n-GaAs for heterojunction bipolar transistors

Author

Kim, I.-H. ; Park, S.H. ; Lee, T.-W. ; Park, M.P. ; Ryum, B.R. ; Pyun, K.E. ; Park, H.M.

Author_Institution

Semicond. Div., Electron. & Telecommun. Res. Inst., Taejon, South Korea

fYear

1997

fDate

8-11 Sep 1997

Firstpage

455

Lastpage

458

Abstract

Pd/Ge-based ohmic contact behaviors on n-type InGaAs and GaAs were investigated. Good ohmic contacts were obtained by rapid thermal annealing up to 400°C, but in the contact to n-InGaAs, degradation was observed above 425°C. This was related to phase transformation and atomic redistribution. AlGaAs/GaAs heterojunction bipolar transistors using this ohmic contact system showed good DC and RF performances, which were strongly dependent on the specific contact resistance

Keywords

III-V semiconductors; contact resistance; gallium arsenide; germanium; heterojunction bipolar transistors; indium compounds; ohmic contacts; palladium; rapid thermal annealing; semiconductor device metallisation; 400 to 425 C; DC performance; GaAs; InGaAs; Pd-Ge; Pd/Ge ohmic contact; RF performance; atomic redistribution; heterojunction bipolar transistor; n-GaAs; n-InGaAs; phase transformation; rapid thermal annealing; specific contact resistance; Contact resistance; Diffraction; Doping; Gallium arsenide; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Ohmic contacts; Rapid thermal annealing; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711696

Filename

711696