Title :
A germanium on silicon uni-traveling carrier photodiode
Author :
Piels, Molly ; Ramaswamy, Anand ; Bowers, John E.
Author_Institution :
ECE Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
Abstract :
A Ge/Si uni-traveling carrier (UTC) photodetector is demonstrated for the first time. The device has a bandwidth of 15GHz and no saturation of the DC response is visible at -1V up to 28dBm input power.
Keywords :
dark conductivity; elemental semiconductors; germanium; photodiodes; silicon; DC response; Ge-Si; bandwidth 15 GHz; saturation; unitraveling carrier photodiode; voltage -1 V; Bandwidth; Detectors; Photoconductivity; Photodiodes; Photonics; Silicon;
Conference_Titel :
Photonics Conference (PHO), 2011 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4244-8940-4
DOI :
10.1109/PHO.2011.6110407
