Title :
High-coupled power 1.3 μm edge-emitting LED with a rear window and an integrated absorber
Author :
Gen-ei, K. ; Tanioka, A. ; Suhara, H. ; Chinen, K.
Author_Institution :
Electron Device Eng. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
An InGaAsP edge-emitting LED with a rear window and an integrated absorber is developed. Over 220μW of coupled power is achieved, for the first time, without the use of antireflection front facet coating. Even at low ambient temperature of -40°C the stimulated emission is well suppressed
Keywords :
III-V semiconductors; antireflection coatings; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; -40 degC; 1.3 micron; 220 muW; InGaAsP; antireflection front facet coating; edge-emitting LED; integrated absorber; rear window; semiconductors; stimulated emission;
Conference_Titel :
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location :
Brighton
