DocumentCode
274549
Title
High coupling-efficiency, high single transverse-mode yield 1.3μm buried crescent lasers processed by dry etching
Author
Kasukawa, A. ; Iwase, M. ; Matsumoto, N. ; Fukushima, T. ; Makino, T. ; Kashiwa, S.
Author_Institution
Furukawa Electric Co., Ltd., Yokohama Lab., Japan
fYear
1988
fDate
11-15 Sep 1988
Firstpage
420
Abstract
A coupling-efficiency of 63% into a single-mode fiber and a coupled power of 40mW at 160mA were achieved by buried crescent lasers utilizing a newly introduced dry etching process. The single transverse-mode yield was as high as 95%
Keywords
III-V semiconductors; etching; gallium arsenide; gallium compounds; indium compounds; optical couplers; optical fibres; semiconductor junction lasers; 160 mA; 40 mW; 63 percent; 95 percent; GaInAsP-InP; III-V semiconductors; buried crescent lasers; coupling-efficiency; dry etching; semiconductor lasers; single-mode fiber;
fLanguage
English
Publisher
iet
Conference_Titel
Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
Conference_Location
Brighton
Type
conf
Filename
93610
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